Calculation tool
SBAR013 — Isolated Amplifier Voltage Sensing Excel Calculator
This calculator provides estimates of the errors associated with using isolation amplifier devices in a voltage sensing configuration.
AMC3311-Q1
Automotive, 0 to 2-V input, precision reinforced isolated amplifier with integrated DC/DC converter
Data sheet
AMC3311-Q1
- AEC-Q100 qualified for automotive applications:
- Temperature grade 1: –40°C to +125°C, T A
- Single-supply operation (3.3 V or 5 V) with integrated DC/DC converter
- Input voltage range (2 V) optimized for voltage measurements with high input impedance
- Fixed gain: 1.0
- Low DC errors:
- Offset error: ±1 mV (max)
- Offset drift: ±10 µV/°C (max)
- Gain error: ±0.2% (max)
- Gain drift: ±40 ppm/°C (max)
- Nonlinearity: ±0.02% (max)
- High CMTI: 85 kV/µs (min)
- System-level diagnostic features
- Meets CISPR-11 and CISPR-25 EMI standards
- Safety-related certifications:
- 6000-V PK reinforced isolation per DIN EN IEC 60747-17 (VDE 0884-17)
- 4250-V RMS isolation for 1 minute per UL1577
The AMC3311-Q1 is a precision, isolated amplifier with a fully integrated, isolated DC/DC converter that allows single-supply operation from the low-side of the device. The reinforced capacitive isolation barrier is highly resistant to magnetic interference, is certified according to DIN EN IEC 60747-17 (VDE 0884-17) and UL1577, and supports a working voltage of up to 1200 V RMS.
The isolation barrier separates parts of the system that operate on different common-mode voltage levels and protects the low-voltage side from voltage levels that can cause electrical damage and are potentially harmful to an operator.
The input of the AMC3311-Q1 is optimized for direct connection to high-impedance resistive dividers that are typically used for sensing high voltages. The integrated isolated DC/DC converter allows measurement of non-ground-referenced signals and makes the device a unique solution for noisy, space-constrained applications. The high DC accuracy and low temperature drift support accurate voltage monitoring and control.
The AMC3311-Q1 is offered in a wide-body, 16-pin SOIC package, and is specified over the temperature range of –40°C to +125°C.
Technical documentation
No results found. Please clear your search and try again.
View all 10 Design & development
For additional terms or required resources, click any title below to view the detail page where available.
Evaluation board
AMC3330EVM — AMC3330 precision reinforced isolated amplifier with integrated DC/DC converter evaluation module
The AMC3330 evaluation module (EVM) is an evaluation platform for the AMC3330 product, a precision isolated amplifier with an integrated DC/DC converter that powers the high side of the amplifier. AMC3330 is a 7-kV reinforced isolated amplifier designed for use in bipolar voltage-measuring (...)
Calculation tool
SBAR020 — Isolated Amplifier Current Sensing Excel Calculator
This calculator provides estimates of the errors associated with using isolation amplifier devices in a current sensing configuration.
Supported products & hardware
Products
Isolated amplifiers
Isolated ADCs
Precision ADCs
Simulation tool
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs
PMP41078 — High-voltage to low-voltage DC-DC converter reference design with GaN HEMT
This reference design describes a 3.5kW highvoltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller (...)
Test report: PDF
Reference designs
PMP41139 — 3.5kW, 800V to 14V DC/DC converter reference design
This reference design describes a 3.5kW, 800V to 14V DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using stacked half-bridge (SHB) topology makes the converter work at 800V with 650V GaN HEMT. Using LMG3522R030 as primary switches makes the converter (...)
Test report: PDF
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| SO-MOD (DWE) | 16 | Ultra Librarian |
Ordering & quality
Information included:
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Information included:
- Fab location
- Assembly location
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.