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SN54HC03

ACTIVE

Military 4-ch, 2-input, 2-V to 6-V 5.2 mA drive strength NAND gate with open-drain outputs

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Data sheet

SN54HC03

ACTIVE
Data sheet Order now

Product details

Technology family HC Supply voltage (min) (V) 2 Supply voltage (max) (V) 6 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Open-drain Features High speed (tpd 10- 50ns) Data rate (max) (Mbps) 28 Rating Military Operating temperature range (°C) -55 to 125
Technology family HC Supply voltage (min) (V) 2 Supply voltage (max) (V) 6 Number of channels 4 Inputs per channel 2 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Open-drain Features High speed (tpd 10- 50ns) Data rate (max) (Mbps) 28 Rating Military Operating temperature range (°C) -55 to 125
CDIP (J) 14 130.4652 mm² 19.56 x 6.67 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • Wide Operating Voltage Range: 2 V to 6 V
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 20-µA Maximum ICC
  • Typical tpd = 8 ns at 5 V
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA
  • Wide Operating Voltage Range: 2 V to 6 V
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 20-µA Maximum ICC
  • Typical tpd = 8 ns at 5 V
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA

This device contains four independent 2-input NAND Gates with open-drain outputs. Each gate performs the Boolean function Y = A ● B in positive logic.

This device contains four independent 2-input NAND Gates with open-drain outputs. Each gate performs the Boolean function Y = A ● B in positive logic.
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* Data sheet SNx4HC03 Quadruple 2-Input NAND Gates with Open-Drain Outputs datasheet (Rev. F) PDF | HTML 30 Apr 2021

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