Gallium nitride (GaN) motor drivers
Maximize power efficiency and minimize solution size with gallium nitride (GaN) intelligent power modules (IPMs) and half-bridge motor drivers
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Find your GaN motor driver by voltage
650V GaN IPMs
Maximize power density and efficiency using our high-voltage GaN IPM device
<200V GaN half-bridge drivers
Enhance efficiency and minimize solution size with our medium-voltage GaN half-bridge device
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Benefits of our GaN motor drivers
Increase system efficiency
Our GaN motor drivers integrate low on-resistance GaN FETs, delivering up to 2% higher power efficiency and cutting power losses by 50% or more compared to silicon-based technologies.
Extend motor-drive lifetimes
Integrated slew-rate control and multilevel protection minimize motor heating, maximize power efficiency, and enhance insulation over a motor’s lifetime. Delivering peak performance and durability.
Enable quiet and smooth motor operation
Achieve quieter operation and smoother torque with TI GaN through higher switching frequencies, low propagation delay, and minimized current harmonics with low dead time.
Minimize solution size by 50%
Shrink your system footprint with GaN by delivering ultra-high power density and reducing external system components for more compact, efficient designs compared to silicon.
Featured technologies
Introduction to GaN IPMs
Intelligent power modules (IPMs) built with gallium nitride (GaN) enable higher power density and efficiency compared with traditional silicon metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs).
Benefits:
- >99% efficiency in the power stage eliminates the need for cooling components such as heat sinks, improving overall efficiency and reducing motor-driver system size.
- <150ns dead time and propagation delay, along with higher pulse-width modulation switching frequencies, reduces current distortion to improve acoustic performance.
How Three-Phase Integrated GaN Technology Maximizes Motor-Drive Performance
Introduction to GaN half-bridges
Gallium Nitride (GaN) half-bridge power stages deliver superior power density and a more compact footprint compared to traditional silicon MOSFETs.
Benefits:
- Achieve over 50% reduction in PCB size with GaN half-bridge power stages.
- Reduce power losses by up to 50% at high switching frequencies (100 kHz).
- Enable the use of ceramic capacitors, improving reliability and performance.
48V 1kw robot joint motor control with industrial communication reference design
Achieving household energy efficiency and cost savings with GaN-based motor system designs
Discover featured applications
Design HVAC fans, blowers or pumps for high system efficiency and acoustic performance
Our gallium nitride intelligent power modules help enhance system efficiency and achieve ultraquiet operation.
Benefits:
- Increase heating, ventilation and air-conditioning (HVAC) system efficiency for better seasonal energy efficient ratings.
- Lower deadtime (<150ns) and propagation delay (<150ns) reduce current distortion, which improves acoustic performance.
Featured resources
- DRV7308 – 650V, 205mΩ 3-phase integrated GaN intelligent power module (IPM) with protection and current sense
Improve Energy Star ratings with high-efficiency GaN intelligent power modules
Our gallium nitride (GaN) intelligent power modules allow designers to shrink board size, eliminate cooling components and reduce motor costs.
Benefits:
- Completely eliminate cooling components such as heat sinks.
- Meet energy-efficiency standards with lower-cost motors.
- Quiet compressor operation with low current distortion.
- Reduce electromagnetic interference concerns with built-in slew-rate control.
Featured resources
- DRV7308 – 650V, 205mΩ 3-phase integrated GaN intelligent power module (IPM) with protection and current sense
Create compact designs with high power density
Our gallium nitride intelligent power modules help deliver high power levels without a heat sink in compact packages.
Benefits:
- Enable higher inverter efficiency and eliminate cooling methods in a high ambient temeprature environment.
- Reducing the size of the intelligent power module by as much as 60% enables smaller printed circuit boards.
- Integrated protection and voltage-switching slew-rate control enhance reliability.
Featured resources
- DRV7308 – 650V, 205mΩ 3-phase integrated GaN intelligent power module (IPM) with protection and current sense
Design cooker hoods with ultraquiet fans
Our gallium nitride intelligent power modules ease system design efforts.
Benefits:
- Ultra-low dead time and propagation delay enable designs with low audible noise.
- A switching frequency >20kHz, even at high ambient temperatures, helps eliminate audible noise.
- Reducing the size of the intelligent power module by as much as 60% enables smaller printed circuit boards.
Featured resources
- DRV7308 – 650V, 205mΩ 3-phase integrated GaN intelligent power module (IPM) with protection and current sense