* TMUX7308F
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* (C) Copyright 2020 Texas Instruments Incorporated. All rights reserved.                                            
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** This model is designed as an aid for customers of Texas Instruments.
** TI and its licensors and suppliers make no warranties, either expressed
** or implied, with respect to this model, including the warranties of 
** merchantability or fitness for a particular purpose.  The model is
** provided solely on an "as is" basis.  The entire risk as to its quality
** and performance is with the customer.
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*
* This model is subject to change without notice. Texas Instruments
* Incorporated is not responsible for updating this model.
*
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*
** Released by: Texas Instruments Incorporated
* Part: TMUX7308
* Date: 3/17/21
* Model Type: ALL-IN-ONE
* Simulator: PSPICE
* Simulator Version: 16.2.0.p001
* EVM Order Number: N/A
* EVM Users Guide: N/A
* Datasheet: SCDS403B
* Topologies Supported: 
*
* Model Version: New model
*
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*
* Updates:
*
* Version 1.0 : New model
*
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*
* Model Usage Notes:
* 
* 1. The following limited specs/feature set have been modeled
*    This model reflects the published specs for 12V, 36V, +/-15V, and +/-20V supply operation at room temperature (25C):
*       a. DC: On-Resistance (RON), Delta On-Resistance (Delta RON), On-Resistance Flatness (RON Flatness).
*       b. DC: Supply Current (IDD/ISS) (note that the shoot-through current behavior due to slow or floating CMOS inputs is not modeled).
*       c. DC: Source and Drain on/off leakage (ISON/ISOFF/IDON/IDOFF)
*	d. DC: VIH/VIL
*	e. AC: CON, CSOFF, CDOFF
*       f. AC: Bandwidth, Off-Isolation (OISO), and Crosstalk (XTALK)
*       g. Transient: Charge Injection (QINJ)
*       h. Transient: Break-Before-Make Timing (tBBM)
*       i. Transient: Switching Time Between Channels (Switching Frequency should be limited to <2MHz for accurate results and to avoid convergence errors)
*
* 2. This model reflects the published fault protected features for 12V, 36V, +/-15V, and +/-20V supply operation at room temperature (25C):
*	a. Transient: Fault event triggering when Sx exceeds positive or negative threshold	
*	b. Transient: Resposne timing to an overvoltage or undervoltage fault event with according to the datasheet specifications
*       c. Transient: Recovery timing to an overvoltage or undervoltage fault event with according to the datasheet specifications
* 3. This model may not reflect other published specs and/or features.
* 4. Temperature effects are not modeled. 
* 5. If convergence errors are encountered, try modifying simulation parameters:
*	 Pulse rise and fall = 15ns
* 6. During an undervoltage event the modeled output may cross the below the threshold voltage further than the actual silicon performance.  
	Refer to the datasheet Figure 7-38 for an accurate representation of the negative overvoltage Drain output response.
* 7. Source and Drain input/output leakage current during overvoltage events is not modeled
*
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