SLPS406B September   2013  – May 2014 CSD19531Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Characteristics
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQJ|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • Primary Side Telecom
  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View
P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10 V) 37 nC
Qgd Gate Charge Gate to Drain 6.6 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 6.0 mΩ
VGS = 10 V 5.3 mΩ
VGS(th) Threshold Voltage 2.7 V


Ordering Information

Device Media Qty Package Ship
CSD19531Q5A 13-Inch Reel 2500 SON 5 x 6 mm
Plastic Package		 Tape and Reel
CSD19531Q5AT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 100 A
Continuous Drain Current (Silicon limited), TC = 25°C 110
Continuous Drain Current(1) 16
IDM Pulsed Drain Current(2) 337 A
PD Power Dissipation(1) 3.3 W
Power Dissipation, TC = 25°C 125
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 60 A, L = 0.1 mH, RG = 25 Ω		 180 mJ
  1. Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB.
  2. Max RθJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

graph07_SLPS406.png

Gate Charge

graph04_SLPS406.png