SLPS633 December   2016 CSD18543Q3A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3A Package Dimensions
    2. 7.2 Q3A Recommended PCB Pattern
    3. 7.3 Q3A Recommended Stencil Pattern
    4. 7.4 Q3A Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low RDS(on)
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

  • Solid State Relay Switch
  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Isolated Converter Primary Side Switch
  • Motor Control

3 Description

This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View
CSD18543Q3A P0093-01_LPS198.gif

 .

 .

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 11.1 nC
Qgd Gate Charge Gate-to-Drain 1.7 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 12.0 mΩ
VGS = 10 V 8.1
VGS(th) Threshold Voltage 2.0 V

Device Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD18543Q3A 13-Inch Reel 2500 SON
3.30-mm × 3.30-mm
Plastic Package		 Tape and Reel
CSD18543Q3AT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 35 A
Continuous Drain Current (Silicon Limited), TC = 25°C 60
Continuous Drain Current(1) 12
IDM Pulsed Drain Current(2) 156 A
PD Power Dissipation(1) 2.8 W
Power Dissipation, TC = 25°C 66
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 33 A, L = 0.1 mH, RG = 25 Ω		 55 mJ
  1. Typical RθJA = 45°C/W on a 1-in2, 2-oz Cu pad on a
    0.06-in thick FR4 PCB.
  2. Max RθJC = 1.9°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD18543Q3A D007_SLPS633.gif

Gate Charge

CSD18543Q3A D004_SLPS633_FP.gif