SLPS320B November   2012  – May 2017 CSD18502Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen-Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

CSD18502Q5B P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain to source voltage 40 V
Qg Gate charge total (4.5 V) 25 nC
Qgd Gate charge gate to drain 8.4 nC
RDS(on) Drain to source on resistance VGS = 4.5 V 2.5 mΩ
VGS = 10 V 1.8 mΩ
VGS(th) Threshold voltage 1.8 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD18502Q5B 2500 13-Inch Reel SON 5 mm × 6 mm Plastic Package Tape and Reel
CSD18502Q5BT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the datasheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain to source voltage 40 V
VGS Gate to source voltage ±20 V
ID Continuous drain current (package limited) 100 A
Continuous drain current (silicon limited), TC = 25°C 204
Continuous drain current(1) 26
IDM Pulsed drain current(2) 400 A
PD Power dissipation(1) 3.2 W
Power dissipation, TC = 25°C 156
TJ Operating junction temperature –55 to 150 °C
Tstg Storage temperature –55 to 150 °C
EAS Avalanche energy, single pulse
ID = 88 A, L = 0.1 mH, RG = 25 Ω		 387 mJ
  1. Typical RθJA = 40°C/W on a 1 inch2 , 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
  2. Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD18502Q5B D007_SLPS320.gif

Gate Charge

CSD18502Q5B D004_SLPS320_FP.gif