SLPS374A November   2012  – September 2014 CSD17559Q5

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5 Package Dimensions
    2. 7.2 Q5 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Extremely Low Resistance
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
  • Synchronous Rectification
  • Active ORing and Hotswap Applications

3 Description

This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Top View
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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 39 nC
Qgd Gate Charge Gate-to-Drain 9.3 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 1.15 mΩ
VGS = 10 V 0.95 mΩ
VGS(th) Threshold Voltage 1.4 V

Ordering Information(1)

Device Qty Media Package Ship
CSD17559Q5 2500 13-Inch Reel SON 5 × 6 mm Plastic Package Tape and Reel
CSD17559Q5T 250 13-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 100 A
Continuous Drain Current (Silicon limited), TC = 25°C 257
Continuous Drain Current(1) 40 A
IDM Pulsed Drain Current(2) 400 A
PD Power Dissipation(1) 3.2 W
Power Dissipation, TC = 25°C 96
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 104 A, L = 0.1m H, RG = 25 Ω		 541 mJ
  1. Typical RθJA = 40°C/W on 1 inch2 (6.45 cm2), 2 oz.
    (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
  2. Max RθJC = 1.2°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

graph07p3_SLPS374.png

Gate Charge

graph04_SLPS374.png