SLPS386B September   2012  – January 2016 CSD17551Q3A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3A Package Dimensions
    2. 7.2 Q3A Recommended PCB Pattern
    3. 7.3 Q3A Recommended Stencil Pattern
    4. 7.4 Q3A Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

  • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
  • Optimized for Control FET Applications

3 Description

This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

CSD17551Q3A P0093-01_LPS198.gif

SPACE

SPACE

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 6.0 nC
Qgd Gate Charge Gate-to-Drain 1.5 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 9.6 mΩ
VGS = 10 V 7.8 mΩ
VGS(th) Threshold Voltage 1.6 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD17551Q3A 2500 13-Inch Reel SON
3.3 mm × 3.3 mm Plastic Package		 Tape and Reel
CSD17551Q3AT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current, TC = 25°C 48 A
Continuous Drain Current, Silicon Limited 48 A
Continuous Drain Current, TA = 25°C(1) 12 A
IDM Pulsed Drain Current, TA = 25°C(2) 71 A
PD Power Dissipation(1) 2.6 W
TJ, Tstg Operating Junction Temperature,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 25 A, L = 0.1 mH, RG = 25 Ω		 31 mJ
  1. Typical RθJA = 48°C/W on a 1 inch2 (6.45 cm2),
    2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
  2. Pulse duration ≤300 μs, duty cycle ≤2%

RDS(on) vs VGS

CSD17551Q3A graph07p2_SLPS386.png

Gate Charge

CSD17551Q3A graph04p2_SLPS386.png