SLPS202B August   2009  – December 2015 CSD16406Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQG|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
  • Optimized for Control or Synchronous FET Applications

3 Description

This 25 V, 4.2 mΩ, 3.3 mm × 3.3 mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Top View
CSD16406Q3 P0095-01_LPS202.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 25 V
Qg Gate Charge Total (4.5 V) 5.8 nC
Qgd Gate Charge Gate to Drain 1.5 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 5.9 mΩ
VGS = 10 V 4.2 mΩ
Vth Threshold Voltage 1.8 V

.
Ordering Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD16406Q3 13-Inch Reel 2500 SON 3.3 x 3.3 mm
Plastic Package		 Tape and Reel
CSD16406Q3T 13-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage +16 / –12 V
ID Continuous Drain Current (Package limited) 60 A
Continuous Drain Current (Silicon limited), TC = 25°C 79
Continuous Drain Current(1) 19
IDM Pulsed Drain Current(2) 240 A
PD Power Dissipation(1) 2.8 W
Power Dissipation, TC = 25°C 46
TJ,
Tstg 		Operating Junction Temperature,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 45 A, L = 0.1 mH, RG = 25 Ω		 101 mJ
  1. Typical RθJA = 45°C/W on a 1 inch2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
  2. Max RθJC = 2.7°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD16406Q3 D007_SLPS202.gif

Gate Charge

CSD16406Q3 D004_SLPS202_FP.gif