SLPS535 March 2015 CSD13302W
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1 mm outline with excellent thermal characteristics and an ultra low profile.

| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 12 | V | |
| Qg | Gate Charge Total (4.5 V) | 6.0 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 2.1 | nC | |
| RDS(on) | Drain-to-Source On-Resistance |
VGS = 2.5 V | 21.2 | mΩ |
| VGS = 4.5 V | 14.6 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.0 | V | |
| Device | Qty | Media | Package | Ship |
|---|---|---|---|---|
| CSD13302W | 3000 | 7-Inch Reel | 1.0 mm × 1.0 mm Wafer Level Package | Tape and Reel |
| CSD13302WT | 250 | 7-Inch Reel |
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 12 | V |
| VGS | Gate-to-Source Voltage | ±10 | V |
| ID | Continuous Drain Current (1) | 1.6 | A |
| IDM | Pulsed Drain Current (2) | 29 | A |
| PD | Power Dissipation (3) | 1.8 | W |
| TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
RDS(on) vs VGS![]() |
Gate Charge![]() |